技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA) Formed Leads
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1.5V @ 500mA, 1.5A
• Current - Collector Cutoff (Max) 100µA
• DC Current Gain (hFE) (Min) @ Ic, Vce 5 @ 1A, 2V
• Supplier Device Package TO-92-3
• Current - Collector (Ic) (Max) 1.5 A
• Voltage - Collector Emitter Breakdown (Max) 400 V
• Power - Max 2.1 W
• ECCN EAR99
• HTSUS 8541.29.0095