技术参数

• Package / Case 8-SMD, Flat Lead
• Mounting Type Surface Mount
• Transistor Type PNP
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 300mV @ 20mA, 2A
• Current - Collector Cutoff (Max) 100nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1.5A, 2V
• Frequency - Transition 100MHz
• Supplier Device Package ChipFET™
• Current - Collector (Ic) (Max) 2 A
• Voltage - Collector Emitter Breakdown (Max) 35 V
• Power - Max 635 mW
• ECCN EAR99
• HTSUS 8542.39.0001