技术参数

• Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 195A (Tc)
• Rds On (Max) @ Id, Vgs 2.6mOhm @ 100A, 10V
• Power Dissipation (Max) 375W (Tc)
• Vgs(th) (Max) @ Id 3.7V @ 250µA
• Supplier Device Package TO-262
• Drive Voltage (Max Rds On, Min Rds On) 6V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 75 V
• Gate Charge (Qg) (Max) @ Vgs 407 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 13660 pF @ 25 V
• ECCN EAR99
• HTSUS 8542.39.0001