技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 155mV @ 75mA, 1.5A
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 200 @ 500mA, 2V
• Frequency - Transition 450MHz
• Supplier Device Package 3-CPH
• Current - Collector (Ic) (Max) 3 A
• Voltage - Collector Emitter Breakdown (Max) 30 V
• Power - Max 900 mW
• ECCN EAR99
• HTSUS 8541.21.0075