技术参数

• Package / Case 8-PowerVDFN
• Mounting Type Surface Mount
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 40A (Ta), 100A (Tc)
• Rds On (Max) @ Id, Vgs 1.4mOhm @ 50A, 10V
• Power Dissipation (Max) 3.6W (Ta), 156W (Tc)
• Vgs(th) (Max) @ Id 2.35V @ 150µA
• Supplier Device Package 8-PQFN (5x6)
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 25 V
• Gate Charge (Qg) (Max) @ Vgs 83 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 6115 pF @ 13 V
• ECCN EAR99
• HTSUS 8542.39.0001