- 产品型号 G3R20MT12K
- 品牌 GeneSiC Semiconductor
- RoHS Yes
- 描述 SIC MOSFET N-CH 128A TO247-4
- 分类 单 FET、MOSFET
-
PDF
- 库存 2585
- 1 36.09
技术参数
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 128A (Tc)
- Rds On (Max) @ Id, Vgs 24mOhm @ 60A, 15V
- Power Dissipation (Max) 542W (Tc)
- Vgs(th) (Max) @ Id 2.69V @ 15mA
- Supplier Device Package TO-247-4
- Drive Voltage (Max Rds On, Min Rds On) 15V
- Vgs (Max) ±15V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 219 nC @ 15 V
- Input Capacitance (Ciss) (Max) @ Vds 5873 pF @ 800 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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