- 产品型号 RD3S100AAFRATL
- 品牌 ROHM Semiconductor
- RoHS Yes
- 描述 MOSFET N-CH 190V 10A TO252
- 分类 单 FET、MOSFET
- 库存 4103
定价:
- 2500 1.28
- 5000 1.23
技术参数
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 10A (Tc)
- Rds On (Max) @ Id, Vgs 182mOhm @ 5A, 10V
- Power Dissipation (Max) 85W (Tc)
- Vgs(th) (Max) @ Id 2.5V @ 1mA
- Supplier Device Package TO-252
- Grade Automotive
- Drive Voltage (Max Rds On, Min Rds On) 4V, 10V
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 190 V
- Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 2000 pF @ 25 V
- Qualification AEC-Q101
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
