- 产品型号 SIDC03D120H6X1SA3
- 品牌 IR (Infineon Technologies)
- RoHS No
- 描述 DIODE GP 1.2KV 3A WAFER
- 分类 单二极管
-
PDF
- 库存 1500
定价:
- 1 0.76
- 10 0.66
- 100 0.45
- 500 0.38
- 1000 0.32
- 2000 0.29
- 5000 0.27
- 10000 0.25
技术参数
- Package / Case Die
- Mounting Type Surface Mount
- Speed Standard Recovery >500ns, > 200mA (Io)
- Technology Standard
- Current - Average Rectified (Io) 3A
- Supplier Device Package Sawn on foil
- Operating Temperature - Junction -55°C ~ 150°C
- Voltage - DC Reverse (Vr) (Max) 1200 V
- Voltage - Forward (Vf) (Max) @ If 1.6 V @ 3 A
- Current - Reverse Leakage @ Vr 27 µA @ 1200 V
- ECCN EAR99
- HTSUS 8541.10.0080
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status RoHS non-compliant
