技术参数

• Package / Case DirectFET™ Isometric SQ
• Mounting Type Surface Mount
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 19A (Ta), 84A (Tc)
• Rds On (Max) @ Id, Vgs 3.8mOhm @ 19A, 10V
• Power Dissipation (Max) 2.2W (Ta), 42W (Tc)
• Vgs(th) (Max) @ Id 2.35V @ 25µA
• Supplier Device Package DirectFET™ Isometric SQ
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 25 V
• Gate Charge (Qg) (Max) @ Vgs 20 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 1810 pF @ 13 V
• ECCN EAR99
• HTSUS 0000.00.0000
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant