技术参数

• Package / Case TO-226-3, TO-92-3 Long Body
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 600mV @ 2mA, 20mA
• Current - Collector Cutoff (Max) 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 10mA, 10V
• Frequency - Transition 50MHz
• Supplier Device Package 3-MP
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 300 V
• Power - Max 900 mW
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• RoHS Status Not applicable