技术参数

• Package / Case TO-262-3 Long Leads, I2PAK, TO-262AA
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 195A (Tc)
• Rds On (Max) @ Id, Vgs 1.6mOhm @ 100A, 10V
• Power Dissipation (Max) 294W (Tc)
• Vgs(th) (Max) @ Id 3.9V @ 250µA
• Supplier Device Package TO-262
• Drain to Source Voltage (Vdss) 40 V
• Gate Charge (Qg) (Max) @ Vgs 324 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 10820 pF @ 25 V
• ECCN EAR99
• HTSUS 0000.00.0000
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant