技术参数

• Package / Case TO-220-3 Full Pack
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 11A (Tc)
• Rds On (Max) @ Id, Vgs 380mOhm @ 5.5A, 10V
• Power Dissipation (Max) 36W (Tc)
• Vgs(th) (Max) @ Id 5V @ 250µA
• Supplier Device Package TO-220F
• Drain to Source Voltage (Vdss) 650 V
• Gate Charge (Qg) (Max) @ Vgs 52 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 1490 pF @ 25 V
• ECCN EAR99
• HTSUS 8542.39.0001
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• RoHS Status Not applicable