技术参数

• Package / Case 3-SSIP
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 600mV @ 2mA, 20mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 90 @ 100mA, 1V
• Current - Collector (Ic) (Max) 50 mA
• Voltage - Collector Emitter Breakdown (Max) 25 V
• Power - Max 1 W
• ECCN EAR99
• HTSUS 0000.00.0000
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• RoHS Status Not applicable