- 产品型号 IRFR220
- 品牌 Harris Corporation
- RoHS No
- 描述 MOSFET N-CH 200V 4.6A TO252AA
- 分类 单 FET、MOSFET
-
PDF
- 库存 2028
定价:
- 1 0.59
技术参数
- Package / Case TO-252-3, DPAK (2 Leads + Tab), SC-63
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 150°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 4.6A (Tc)
- Rds On (Max) @ Id, Vgs 800mOhm @ 2.4A, 10V
- Power Dissipation (Max) 50W (Tc)
- Vgs(th) (Max) @ Id 4V @ 250µA
- Supplier Device Package TO-252AA
- Vgs (Max) ±20V
- Drain to Source Voltage (Vdss) 200 V
- Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 330 pF @ 25 V
- ECCN EAR99
- HTSUS 0000.00.0000
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status Vendor Undefined
- RoHS Status RoHS non-compliant
