技术参数

• Memory Size 8Mbit
• Memory Type Volatile
• Operating Temperature 0°C ~ 85°C (TA)
• Voltage - Supply 2.375V ~ 2.625V
• Technology SRAM - Synchronous
• Memory Format SRAM
• Memory Interface HSTL
• Access Time 1.8 ns
• Memory Organization 512K x 18
• DigiKey Programmable Not Verified
• ECCN 3A991B2A
• HTSUS 8542.32.0041
• Moisture Sensitivity Level (MSL) 3 (168 Hours)
• REACH Status Vendor Undefined
• RoHS Status Not applicable