- 产品型号 NTH4L160N120SC1
- 品牌 Sanyo Semiconductor/onsemi
- RoHS Yes
- 描述 SICFET N-CH 1200V 17.3A TO247
- 分类 单 FET、MOSFET
-
PDF
- 库存 2611
定价:
- 1 8.5
- 30 6.78
- 120 6.07
- 510 5.36
- 1020 4.82
- 2010 4.52
技术参数
- Package / Case TO-247-4
- Mounting Type Through Hole
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology SiCFET (Silicon Carbide)
- FET Type N-Channel
- Current - Continuous Drain (Id) @ 25°C 17.3A (Tc)
- Rds On (Max) @ Id, Vgs 224mOhm @ 12A, 20V
- Power Dissipation (Max) 111W (Tc)
- Vgs(th) (Max) @ Id 4.3V @ 2.5mA
- Supplier Device Package TO-247-4L
- Drive Voltage (Max Rds On, Min Rds On) 20V
- Vgs (Max) +25V, -15V
- Drain to Source Voltage (Vdss) 1200 V
- Gate Charge (Qg) (Max) @ Vgs 34 nC @ 20 V
- Input Capacitance (Ciss) (Max) @ Vds 665 pF @ 800 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) Not Applicable
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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