• 库存 1611
定价:
  • 1 10.92
  • 30 8.84
  • 120 8.32
  • 510 7.54
  • 1020 6.92

技术参数

  • Package / Case TO-247-3
  • Mounting Type Through Hole
  • Operating Temperature -55°C ~ 175°C (TJ)
  • Technology SiCFET (Silicon Carbide)
  • FET Type N-Channel
  • Current - Continuous Drain (Id) @ 25°C 31A (Tc)
  • Rds On (Max) @ Id, Vgs 110mOhm @ 20A, 20V
  • Power Dissipation (Max) 178W (Tc)
  • Vgs(th) (Max) @ Id 4.3V @ 5mA
  • Supplier Device Package TO-247-3
  • Grade Automotive
  • Drive Voltage (Max Rds On, Min Rds On) 20V
  • Vgs (Max) +25V, -15V
  • Drain to Source Voltage (Vdss) 1200 V
  • Gate Charge (Qg) (Max) @ Vgs 56 nC @ 20 V
  • Input Capacitance (Ciss) (Max) @ Vds 1670 pF @ 800 V
  • Qualification AEC-Q101
  • ECCN EAR99
  • HTSUS 8541.29.0095
  • Moisture Sensitivity Level (MSL) Not Applicable
  • REACH Status REACH Unaffected
  • RoHS Status ROHS3 Compliant

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