技术参数

• Package / Case Module
• Mounting Type Chassis Mount
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology SiCFET (Silicon Carbide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 300A (Tc)
• Power Dissipation (Max) 1360W (Tc)
• Vgs(th) (Max) @ Id 5.6V @ 80mA
• Supplier Device Package Module
• Vgs (Max) +22V, -4V
• Drain to Source Voltage (Vdss) 1200 V
• Input Capacitance (Ciss) (Max) @ Vds 15000 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant