技术参数

• Package / Case TO-226-3, TO-92-3 Long Body
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 500mV @ 60mA, 3A
• Current - Collector Cutoff (Max) 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 280 @ 500mA, 2V
• Frequency - Transition 120MHz
• Supplier Device Package 3-MP
• Current - Collector (Ic) (Max) 5 A
• Voltage - Collector Emitter Breakdown (Max) 20 V
• Power - Max 900 mW
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• RoHS Status Not applicable