技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA)
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 600mV @ 5mA, 50mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 50mA, 10V
• Frequency - Transition 70MHz
• Supplier Device Package 3-NP
• Current - Collector (Ic) (Max) 200 mA
• Voltage - Collector Emitter Breakdown (Max) 400 V
• Power - Max 600 mW
• ECCN EAR99
• HTSUS 8541.21.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• RoHS Status Not applicable