技术参数

• Package / Case 3-SSIP
• Mounting Type Through Hole
• Transistor Type NPN
• Vce Saturation (Max) @ Ib, Ic 500mV @ 5mA, 50mA
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 1mA, 6V
• Frequency - Transition 250MHz
• Supplier Device Package 3-SPA
• Current - Collector (Ic) (Max) 200 mA
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 250 mW
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant