技术参数

• Package / Case 3-SSIP
• Mounting Type Through Hole
• Transistor Type NPN
• Vce Saturation (Max) @ Ib, Ic 500mV @ 4mA, 200mA
• DC Current Gain (hFE) (Min) @ Ic, Vce 300 @ 10mA, 5V
• Frequency - Transition 250MHz
• Supplier Device Package 3-SPA
• Current - Collector (Ic) (Max) 300 mA
• Voltage - Collector Emitter Breakdown (Max) 25 V
• Power - Max 300 mW
• ECCN EAR99
• HTSUS 8541.21.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• RoHS Status Not applicable