技术参数

• Package / Case 3-SSIP
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 700mV @ 200mA, 1A
• Current - Collector Cutoff (Max) 200nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 100mA, 2V
• Frequency - Transition 60MHz
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 160 V
• Power - Max 1 W
• ECCN EAR99
• HTSUS 8541.29.0075
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status Vendor Undefined
• RoHS Status Not applicable