技术参数

• Package / Case DirectFET™ Isometric MT
• Mounting Type Surface Mount
• Operating Temperature -40°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 23A (Ta), 150A (Tc)
• Rds On (Max) @ Id, Vgs 3.4mOhm @ 23A, 10V
• Power Dissipation (Max) 2.8W (Ta), 89W (Tc)
• Vgs(th) (Max) @ Id 2.25V @ 250µA
• Supplier Device Package DIRECTFET™ MT
• Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
• Vgs (Max) ±20V
• Drain to Source Voltage (Vdss) 40 V
• Gate Charge (Qg) (Max) @ Vgs 63 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 5950 pF @ 15 V
• ECCN EAR99
• HTSUS 8541.29.0095
• Moisture Sensitivity Level (MSL) 1 (Unlimited)
• REACH Status REACH Unaffected
• RoHS Status ROHS3 Compliant