- 产品型号 IPB180P04P4L02ATMA2
- 品牌 IR (Infineon Technologies)
- RoHS Yes
- 描述 MOSFET P-CH 40V 180A TO263-7
- 分类 单 FET、MOSFET
-
PDF
- 库存 2611
- 1000 2.07
- 2000 1.95
- 5000 1.87
技术参数
- Package / Case TO-263-7, D2PAK (6 Leads + Tab)
- Mounting Type Surface Mount
- Operating Temperature -55°C ~ 175°C (TJ)
- Technology MOSFET (Metal Oxide)
- FET Type P-Channel
- Current - Continuous Drain (Id) @ 25°C 180A (Tc)
- Rds On (Max) @ Id, Vgs 2.4mOhm @ 100A, 10V
- Power Dissipation (Max) 150W (Tc)
- Vgs(th) (Max) @ Id 2.2V @ 410µA
- Supplier Device Package PG-TO263-7-3
- Drive Voltage (Max Rds On, Min Rds On) 4.5V, 10V
- Vgs (Max) +5V, -16V
- Drain to Source Voltage (Vdss) 40 V
- Gate Charge (Qg) (Max) @ Vgs 286 nC @ 10 V
- Input Capacitance (Ciss) (Max) @ Vds 18700 pF @ 25 V
- ECCN EAR99
- HTSUS 8541.29.0095
- Moisture Sensitivity Level (MSL) 1 (Unlimited)
- REACH Status REACH Unaffected
- RoHS Status ROHS3 Compliant
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