技术参数

• Package / Case TO-237AA
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature -65°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 250mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 80 @ 50mA, 1V
• Frequency - Transition 500MHz
• Supplier Device Package TO-237
• Current - Collector (Ic) (Max) 2 A
• Voltage - Collector Emitter Breakdown (Max) 60 V
• Power - Max 1 W
• ECCN EAR99
• HTSUS 8541.21.0095
• RoHS Status RoHS non-compliant