技术参数

• Package / Case TO-237AA
• Mounting Type Through Hole
• Operating Temperature -55°C ~ 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 310mA (Ta)
• Rds On (Max) @ Id, Vgs 5Ohm @ 500mA, 10V
• Power Dissipation (Max) 1W (Ta)
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Supplier Device Package TO-237
• Drive Voltage (Max Rds On, Min Rds On) 5V, 10V
• Vgs (Max) +15V, -300mV
• Drain to Source Voltage (Vdss) 60 V
• Input Capacitance (Ciss) (Max) @ Vds 60 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status Vendor Undefined
• RoHS Status ROHS3 Compliant