技术参数

• Package / Case TO-237AA
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1.5V @ 100mA, 1A
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 250mA, 2V
• Frequency - Transition 50MHz
• Supplier Device Package TO-237
• Current - Collector (Ic) (Max) 1 A
• Voltage - Collector Emitter Breakdown (Max) 80 V
• Power - Max 850 mW
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status RoHS non-compliant