技术参数

• Package / Case TO-226-3, TO-92-3 Long Body
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 120°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 300mV @ 50mA, 1A
• Current - Collector Cutoff (Max) 200nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 199 @ 100mA, 2V
• Supplier Device Package TO-92L
• Current - Collector (Ic) (Max) 1 A
• Voltage - Collector Emitter Breakdown (Max) 50 V
• Power - Max 750 mW
• ECCN EAR99
• HTSUS 8541.21.0095
• RoHS Status RoHS non-compliant