技术参数

• Package / Case TO-236-3, SC-59, SOT-23-3
• Mounting Type Surface Mount
• Transistor Type PNP
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 550mV @ 1.25mA, 50mA
• Current - Collector Cutoff (Max) 20nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 250 @ 2mA, 5V
• Frequency - Transition 100MHz
• Supplier Device Package SOT-23
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 32 V
• Power - Max 250 mW
• ECCN EAR99
• HTSUS 8541.21.0095
• RoHS Status RoHS non-compliant