技术参数

• Package / Case 3-SIP
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
• Current - Collector Cutoff (Max) 10µA
• DC Current Gain (hFE) (Min) @ Ic, Vce 1000 @ 150mA, 10V
• Frequency - Transition 55MHz
• Supplier Device Package 3-SIP
• Current - Collector (Ic) (Max) 700 mA
• Voltage - Collector Emitter Breakdown (Max) 20 V
• Power - Max 1 W
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status RoHS non-compliant