技术参数

• Package / Case TO-99-6 Metal Can
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature -65°C ~ 200°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1.2V @ 30mA, 300mA
• Current - Collector Cutoff (Max) 15nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 150mA, 10V
• Frequency - Transition 250MHz
• Supplier Device Package TO-99
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 30 V
• Power - Max 625 mW
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant