技术参数

• Package / Case 14-DIP (0.300", 7.62mm)
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 40 @ 30mA, 10V
• Frequency - Transition 80MHz
• Supplier Device Package 14-DIP
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 200 V
• Power - Max 750 mW
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status RoHS non-compliant