技术参数

• Package / Case TO-3P-3, SC-65-3
• Mounting Type Through Hole
• Transistor Type NPN - Darlington
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 2.5V @ 1mA, 1A
• DC Current Gain (hFE) (Min) @ Ic, Vce 2000 @ 500mA, 5V
• Supplier Device Package TO-3P
• Current - Collector (Ic) (Max) 5 A
• Voltage - Collector Emitter Breakdown (Max) 60 V
• Power - Max 80 W
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status RoHS non-compliant