技术参数

• Package / Case TO-72-3
• Mounting Type Through Hole
• Operating Temperature 175°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 10A
• Rds On (Max) @ Id, Vgs 600Ohm @ 0A, 10V
• Power Dissipation (Max) 800mW (Tc)
• Vgs(th) (Max) @ Id 5V @ 10A
• Supplier Device Package TO-72
• Drive Voltage (Max Rds On, Min Rds On) 10V
• Vgs (Max) ±30V
• Drain to Source Voltage (Vdss) 25 V
• Input Capacitance (Ciss) (Max) @ Vds 5000 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status Vendor Undefined
• RoHS Status ROHS3 Compliant