技术参数

• Package / Case 3-SIP
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 500mV @ 2mA, 20mA
• Current - Collector Cutoff (Max) 10µA
• DC Current Gain (hFE) (Min) @ Ic, Vce 20 @ 10mA, 10V
• Frequency - Transition 500MHz
• Supplier Device Package 3-SIP
• Current - Collector (Ic) (Max) 50 mA
• Voltage - Collector Emitter Breakdown (Max) 35 V
• Power - Max 600 mW
• ECCN EAR99
• HTSUS 8541.21.0095
• RoHS Status RoHS non-compliant