技术参数

• Package / Case SOT-82
• Mounting Type Through Hole
• Transistor Type NPN - Darlington
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 2V @ 12mA, 3A
• Current - Collector Cutoff (Max) 500µA
• DC Current Gain (hFE) (Min) @ Ic, Vce 750 @ 3A, 3V
• Supplier Device Package SOT-82
• Current - Collector (Ic) (Max) 6 A
• Voltage - Collector Emitter Breakdown (Max) 120 V
• Power - Max 60 W
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status RoHS non-compliant