技术参数

• Package / Case 14-DIP (0.300", 7.62mm)
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature -65°C ~ 200°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1.6V @ 30mA, 300mA
• Current - Collector Cutoff (Max) 50nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 100 @ 150mA, 10V
• Frequency - Transition 350MHz
• Supplier Device Package 14-DIP
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 40 V
• Power - Max 650 mW
• ECCN EAR99
• HTSUS 8541.29.0095
• REACH Status Vendor Undefined
• RoHS Status ROHS3 Compliant