技术参数

• Package / Case TO-218-3
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature -65°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1V @ 2A, 4.5A
• Current - Collector Cutoff (Max) 100µA
• DC Current Gain (hFE) (Min) @ Ic, Vce 2.25 @ 4.5A, 5V
• Frequency - Transition 7MHz
• Supplier Device Package TO-218
• Current - Collector (Ic) (Max) 8 A
• Voltage - Collector Emitter Breakdown (Max) 700 V
• Power - Max 125 W
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status RoHS non-compliant