技术参数

• Package / Case TOP-3D, TOP-3E
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 1V @ 1.75A, 7A
• Current - Collector Cutoff (Max) 1mA
• DC Current Gain (hFE) (Min) @ Ic, Vce 4 @ 7A, 1V
• Supplier Device Package SOT-399
• Current - Collector (Ic) (Max) 12 A
• Voltage - Collector Emitter Breakdown (Max) 825 V
• Power - Max 45 W
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant