技术参数

• Package / Case 3-SIP
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature 135°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 400mV @ 50mA, 500mA
• Current - Collector Cutoff (Max) 500nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 100mA, 3V
• Frequency - Transition 100MHz
• Supplier Device Package 3-SIP
• Current - Collector (Ic) (Max) 700 mA
• Voltage - Collector Emitter Breakdown (Max) 80 V
• Power - Max 750 mW
• ECCN EAR99
• HTSUS 8541.21.0095
• RoHS Status RoHS non-compliant