技术参数

• Package / Case TO-3P-3 Full Pack
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 3V @ 1.25A, 5A
• Current - Collector Cutoff (Max) 1mA
• DC Current Gain (hFE) (Min) @ Ic, Vce 7 @ 500mA, 5V
• Supplier Device Package TO-3P(H)IS
• Current - Collector (Ic) (Max) 8 A
• Voltage - Collector Emitter Breakdown (Max) 800 V
• Power - Max 45 W
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant