技术参数

• Package / Case TO-237AA
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 100mA
• Current - Collector Cutoff (Max) 1µA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 30 @ 100mA, 10V
• Frequency - Transition 300MHz
• Supplier Device Package TO-237
• Current - Collector (Ic) (Max) 500 mA
• Voltage - Collector Emitter Breakdown (Max) 300 V
• Power - Max 850 mW
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status RoHS non-compliant