技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA)
• Mounting Type Through Hole
• Transistor Type NPN
• Operating Temperature 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 400mV @ 1mA, 10mA
• Current - Collector Cutoff (Max) 100nA (ICBO)
• DC Current Gain (hFE) (Min) @ Ic, Vce 120 @ 2mA, 12V
• Frequency - Transition 200MHz
• Supplier Device Package TO-92-3
• Current - Collector (Ic) (Max) 100 mA
• Voltage - Collector Emitter Breakdown (Max) 30 V
• Power - Max 250 mW
• ECCN EAR99
• HTSUS 8541.21.0075
• RoHS Status ROHS3 Compliant