技术参数

• Package / Case SC-100, SOT-669
• Mounting Type Surface Mount
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 60A (Ta)
• Rds On (Max) @ Id, Vgs 2.8mOhm @ 30A, 10V
• Power Dissipation (Max) 65W (Tc)
• Supplier Device Package LFPAK
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 32 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 5000 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status Not applicable