技术参数

• Package / Case 4-DIP (0.300", 7.62mm)
• Mounting Type Through Hole
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 1.3A (Ta)
• Rds On (Max) @ Id, Vgs 270mOhm @ 780mA, 10V
• Vgs(th) (Max) @ Id 4V @ 250µA
• Supplier Device Package 4-HVMDIP
• Drain to Source Voltage (Vdss) 100 V
• Gate Charge (Qg) (Max) @ Vgs 16 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 360 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status RoHS non-compliant