技术参数

• Package / Case 8-WFDFN Exposed Pad
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 6A (Ta)
• Rds On (Max) @ Id, Vgs 20mOhm @ 3A, 10V
• Power Dissipation (Max) 1W (Ta)
• Supplier Device Package 8-HUSON (2.7x2)
• Drain to Source Voltage (Vdss) 20 V
• Gate Charge (Qg) (Max) @ Vgs 7 nC @ 4 V
• Input Capacitance (Ciss) (Max) @ Vds 680 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant