技术参数

• Package / Case TO-226-3, TO-92-3 (TO-226AA)
• Mounting Type Through Hole
• Transistor Type PNP
• Operating Temperature -55°C ~ 150°C (TJ)
• Vce Saturation (Max) @ Ib, Ic 500mV @ 10mA, 250mA
• Current - Collector Cutoff (Max) 500nA
• DC Current Gain (hFE) (Min) @ Ic, Vce 50 @ 250mA, 1V
• Frequency - Transition 50MHz
• Supplier Device Package TO-226-3
• Current - Collector (Ic) (Max) 1 A
• Voltage - Collector Emitter Breakdown (Max) 80 V
• Power - Max 1 W
• ECCN EAR99
• HTSUS 8541.29.0075
• RoHS Status ROHS3 Compliant