技术参数

• Package / Case TO-220-3 Full Pack
• Mounting Type Through Hole
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type N-Channel
• Current - Continuous Drain (Id) @ 25°C 16A (Tc)
• Rds On (Max) @ Id, Vgs 290mOhm @ 8A, 10V
• Power Dissipation (Max) 29.9W (Tc)
• Supplier Device Package TO-220FP
• Drain to Source Voltage (Vdss) 600 V
• Gate Charge (Qg) (Max) @ Vgs 18 nC @ 10 V
• Input Capacitance (Ciss) (Max) @ Vds 988 pF @ 25 V
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant