技术参数

• Package / Case 8-WDFN Exposed Pad
• Mounting Type Surface Mount
• Operating Temperature 150°C (TJ)
• Technology MOSFET (Metal Oxide)
• FET Type P-Channel
• Current - Continuous Drain (Id) @ 25°C 35A (Ta)
• Rds On (Max) @ Id, Vgs 5.9mOhm @ 17.5A, 10V
• Power Dissipation (Max) 30W (Tc)
• Vgs(th) (Max) @ Id 2.5V @ 1mA
• Drain to Source Voltage (Vdss) 30 V
• Gate Charge (Qg) (Max) @ Vgs 48 nC @ 4.5 V
• Input Capacitance (Ciss) (Max) @ Vds 4300 pF @ 10 V
• ECCN EAR99
• HTSUS 8541.29.0095
• RoHS Status ROHS3 Compliant